- 专利标题: Magnetoresistive effect element
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申请号: US16676920申请日: 2019-11-07
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公开(公告)号: US10937954B2公开(公告)日: 2021-03-02
- 发明人: Kazuumi Inubushi , Katsuyuki Nakada
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JPJP2017-040527 20170303
- 主分类号: H01L27/22
- IPC分类号: H01L27/22 ; H01L43/10 ; H01F10/32 ; H01L43/02 ; H01L43/08
摘要:
A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and at least one of a first nonmagnetic insertion layer provided directly on a lower surface of the nonmagnetic layer and a second nonmagnetic insertion layer provided directly on an upper surface of the nonmagnetic layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy represented by General Formula (1): AgγX1-γ where X indicates one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0
公开/授权文献
- US20200075845A1 MAGNETORESISTIVE EFFECT ELEMENT 公开/授权日:2020-03-05
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