- 专利标题： Twin gate field effect diode
-
申请号： US16251607申请日： 2019-01-18
-
公开(公告)号： US10937903B2公开(公告)日： 2021-03-02
- 发明人: Karthik Balakrishnan , Pouya Hashemi , Bahman Hekmatshoartabari , Alexander Reznicek
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Erik Johnson
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/739 ; H01L29/06
摘要：
A semiconductor diode including a first conductivity type region on an upper surface of a semiconductor substrate, a fin structure atop the first conductivity type region providing a vertically orientated semiconductor base region, and a second conductivity type region at a second end of the fin structure opposite a first end of the fin structure that is in contact with the first conductivity type region. The semiconductor diode may also include a vertically orientated dual gate that is present around the fin structure. The vertically orientated dual gate including a first gate structure that is present abutting the semiconductor substrate and a second gate structure that is in closer proximity to the second conductivity type region than the first conductivity type region. The first gate structure separated from the second gate structure by a dielectric inter-gate spacer.
公开/授权文献
- US20190157453A1 TWIN GATE FIELD EFFECT DIODE 公开/授权日：2019-05-23
信息查询
IPC分类:
