- 专利标题： Semiconductor device
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申请号： US16785007申请日： 2020-02-07
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公开(公告)号： US10937899B1公开(公告)日： 2021-03-02
- 发明人: Nao Nagata
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/10
摘要：
A semiconductor device include a semiconductor substrate, a first trench electrode formed in the semiconductor substrate and having a first portion, a second trench electrode formed in the semiconductor substrate having a second portion facing the first portion, a floating layer of a first conductivity type formed around the first and second trench electrodes, a drift layer of a second conductivity type connected to the floating layer of the first conductivity type and formed between the first and second trench electrodes, an impurity layer of the first conductivity type connected to the drift layer of the second conductivity type and formed between the first and second trench electrodes, and a floating layer control gate having a portion located at least above the impurity layer of the first conductivity type.
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