- 专利标题： Lateral bipolar junction transistor with dual base region
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申请号： US16540831申请日： 2019-08-14
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公开(公告)号： US10937898B2公开(公告)日： 2021-03-02
- 发明人: Pouya Hashemi , Bahman Hekmatshoartabari , Alexander Reznicek , Karthik Balakrishnan , Jeng-Bang Yau
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Patterson + Sheridan, LLP
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/737 ; H01L29/205 ; H01L29/20 ; H01L21/308 ; H01L21/265 ; H01L21/266 ; H01L21/306 ; H01L29/66 ; H01L29/735 ; H01L29/08
摘要：
A structure and method of forming a lateral bipolar junction transistor (LBJT) that includes: a first base layer, a second base layer over the first base layer, and an emitter region and collector region present on opposing sides of the first base layer, where the first base layer has a wider-band gap than the second base layer, and where the first base layer includes a III-V semiconductor material.
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