- 专利标题: Method of manufacturing a semiconductor device
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申请号: US16424996申请日: 2019-05-29
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公开(公告)号: US10937856B2公开(公告)日: 2021-03-02
- 发明人: Jung Hun Choi , Young Tak Kim , Da Il Eom , Sun Jung Lee
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Lee IP Law, P.C.
- 优先权: KR10-2016-0066897 20160531
- 主分类号: H01L49/02
- IPC分类号: H01L49/02 ; H01L27/06 ; H01L29/78
摘要:
A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.
公开/授权文献
- US20190280081A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 公开/授权日:2019-09-12
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