Solid state imaging device
摘要:
A solid-state imaging device includes a first semiconductor substrate including a pixel array unit, a second semiconductor substrate stacked on a surface of a side opposite to a side on which light is incident in the first semiconductor substrate and on which a pixel control circuit and a reading circuit are arranged, and a plurality of connection electrodes configured to electrically connect pixel control signal lines between the first semiconductor substrate and the second semiconductor substrate, wherein the connection electrodes electrically connect pixel control signal lines within a pixel immediate region which overlaps a region where the pixel array unit is arranged in the first semiconductor substrate, and the pixel control circuit is arranged along an edge of the pixels in either one of a row direction and a column direction arranged in the pixel array unit in the pixel immediate region.
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