- 专利标题： Memory array and a method used in forming a memory array
-
申请号： US16179572申请日： 2018-11-02
-
公开(公告)号： US10937798B2公开(公告)日： 2021-03-02
- 发明人: Changhan Kim , Richard J. Hill , John D. Hopkins , Collin Howder
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11524 ; H01L27/1157 ; H01L27/11556 ; H01L21/28
摘要：
A memory array comprises a vertical stack comprising alternating insulative tiers and wordline tiers. The wordline tiers comprise gate regions of individual memory cells. The gate regions individually comprise part of a wordline in individual of the wordline tiers. Channel material extends elevationally through the insulative tiers and the wordline tiers. The individual memory cells comprise a memory structure laterally between the gate region and the channel material. Individual of the wordlines comprise opposing laterally-outer longitudinal edges. The longitudinal edges individually comprise a longitudinally-elongated recess extending laterally into the respective individual wordline. Methods are disclosed.
信息查询
IPC分类:
