- 专利标题: Fan-out transition structure for transmission of mm-Wave signals from IC to PCB via chip-scale packaging
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申请号: US16568715申请日: 2019-09-12
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公开(公告)号: US10937748B1公开(公告)日: 2021-03-02
- 发明人: Houssam Kanj , Wenyao Zhai , Hari Krishna Pothula , Morris Repeta
- 申请人: HUAWEI TECHNOLOGIES CO., LTD.
- 申请人地址: CN Guangdong
- 专利权人: HUAWEI TECHNOLOGIES CO., LTD.
- 当前专利权人: HUAWEI TECHNOLOGIES CO., LTD.
- 当前专利权人地址: CN Guangdong
- 代理机构: BCF LLP
- 主分类号: H03H7/38
- IPC分类号: H03H7/38 ; H01L23/66 ; H05K1/02 ; H01P5/22 ; H01P3/20 ; H01P3/08 ; H01L23/00
摘要:
The disclosed systems, structures, and methods are directed to a mm-Wave communication structure employing a first transmission structure employing a first ring transition structure followed by a first ground structure and a second ground structure configured to carry a ground signal, a second transmission structure employing a second ring transition structure followed by a third ground structure and a fourth ground structure configured to carry the ground signal, a third transmission structure configured to carry a mm-Wave signal, wherein the third transmission structure begins at the center of the first ring transition structure and the second ring transition structure and the third transmission structure is coplanar with the second transmission structure, and a fourth transmission structure configured to operatively couple an IC and the first transmission layer, the second transmission layer, and the third transmission structure.
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