- 专利标题: Memory device with various pass voltages
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申请号: US16295932申请日: 2019-03-07
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公开(公告)号: US10937655B2公开(公告)日: 2021-03-02
- 发明人: Hee Youl Lee
- 申请人: SK hynix Inc.
- 申请人地址: KR Icheon-si
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Icheon-si
- 代理机构: William Park & Associates Ltd.
- 优先权: KR10-2017-0001875 20170105
- 主分类号: G11C16/26
- IPC分类号: G11C16/26 ; G11C11/56 ; H01L21/28 ; G06F12/02 ; G06F13/42 ; G06F12/16 ; H01L29/51 ; G11C16/04 ; G11C16/10 ; G11C16/34 ; G06F11/07
摘要:
Provided herein may be a memory device and a method of operating the same. The memory device may include a memory block including a plurality of pages, and peripheral circuits configured to sequentially program the pages. The memory device may include control logic configured to control the peripheral circuits such that a program voltage is applied to a word line coupled to a page selected from among the pages such that different pass voltages are applied to all or some word lines coupled to pages on which a program operation has been performed among unselected pages other than the selected page, and to word lines coupled to pages on which a program operation has not been performed among the unselected pages.
公开/授权文献
- US20190206690A1 MEMORY DEVICE AND METHOD OF OPERATING THE SAME 公开/授权日:2019-07-04
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