- 专利标题： Methods of doping a silicon-containing material and methods of forming a semiconductor device
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申请号： US16256918申请日： 2019-01-24
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公开(公告)号： US10937654B2公开(公告)日： 2021-03-02
- 发明人: Francois H. Fabreguette , John A. Smythe , Witold Kula
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/306 ; H01L21/02 ; H01L21/3215 ; H01L21/385 ; H01L21/324 ; H01L21/3115
摘要：
A method of doping a silicon-containing material. The method comprises forming at least one opening in a silicon-containing material and conformally forming a doped germanium material in the at least one opening and adjacent to the silicon-containing material. A dopant of the doped germanium material is transferred into the silicon-containing material. Methods of forming a semiconductor device are also disclosed, as are semiconductor devices comprising a doped silicon-containing material.
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