Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15943721Application Date: 2018-04-03
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Publication No.: US10910386B2Publication Date: 2021-02-02
- Inventor: Wei-Lun Hsu , Hung-Lin Shih , Che-Hung Huang , Ping-Cheng Hsu , Hsu-Yang Wang
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu; CN Quanzhou
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Priority: CN201810189345 20180308
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L27/108 ; H01L21/768 ; H01L21/762 ; H01L21/8234 ; H01L21/8238
Abstract:
According to an embodiment of the present invention, a method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; and forming a bit line structure in the trench.
Public/Granted literature
- US20190279989A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-09-12
Information query
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