- 专利标题: Process kit and method for processing a substrate
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申请号: US15818169申请日: 2017-11-20
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公开(公告)号: US10886113B2公开(公告)日: 2021-01-05
- 发明人: Thanh X. Nguyen , Weimin Zeng , Yong Cao
- 申请人: APPLIED MATERIALS, INC.
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser Taboada
- 主分类号: C23C14/36
- IPC分类号: C23C14/36 ; H01J37/34 ; H01J37/32 ; H01L21/02
摘要:
Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.
公开/授权文献
- US20180151337A1 PROCESS KIT AND METHOD FOR PROCESSING A SUBSTRATE 公开/授权日:2018-05-31
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