- 专利标题: Array plate short repair
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申请号: US16513018申请日: 2019-07-16
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公开(公告)号: US10861579B2公开(公告)日: 2020-12-08
- 发明人: Simon J. Lovett , Richard E. Fackenthal
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Holland & Hart LLP
- 主分类号: G11C11/22
- IPC分类号: G11C11/22 ; G11C29/50 ; G11C29/00
摘要:
Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. Groups of cells may be operated in different ways depending, for example, on a relationship between cell plates of the group of cells, pages of cells, and/or sections of cells. Cells may be selected in pairs or in larger multiples in order to accommodate an electric current relationship (such as a short) between two or more cells within a group, a page, and/or a section. When performing an access based on a smaller page size, a larger page size of cells may be selected to accommodate a short between plates within the smaller page, the larger page, and/or a section of memory that includes the smaller page or the larger page.
公开/授权文献
- US20200013478A1 ARRAY PLATE SHORT REPAIR 公开/授权日:2020-01-09
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