- 专利标题: Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrate
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申请号: US16330884申请日: 2017-02-24
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公开(公告)号: US10833184B2公开(公告)日: 2020-11-10
- 发明人: Ken Sato , Hiroshi Shikauchi , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
- 申请人: SANKEN ELECTRIC CO., LTD. , SHIN-ETSU HANDOTAI CO., LTD.
- 申请人地址: JP Saitama JP Tokyo
- 专利权人: SANKEN ELECTRIC CO., LTD.,SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人: SANKEN ELECTRIC CO., LTD.,SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人地址: JP Saitama JP Tokyo
- 代理机构: Oliff PLC
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@270970d5
- 国际申请: PCT/JP2017/007113 WO 20170224
- 国际公布: WO2018/051532 WO 20180322
- 主分类号: H01L29/205
- IPC分类号: H01L29/205 ; H01L29/207 ; H01L29/201 ; H01L29/36 ; H01L29/778 ; H01L29/812 ; H01L21/02 ; H01L29/66

摘要:
A semiconductor device substrate including: a substrate; a buffer layer which is provided on the substrate and made of a nitride semiconductor; and a device active layer which is formed of a nitride semiconductor layer provided on the buffer layer, the semiconductor device substrate in that the buffer layer includes: a first region which contains carbon and iron; a second region which is provided on the first region and has average concentration of iron lower than that in the first region and average concentration of carbon higher than that in the first region, and the average concentration of the carbon in the second region is lower than the average concentration of the iron in the first region. The semiconductor device substrate which can suppress a transverse leak current in a high-temperature operation of a device while suppressing a longitudinal leak current and can inhibit a current collapse phenomenon is provided.
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