Invention Grant
- Patent Title: Ferroelectric memories
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Application No.: US16270706Application Date: 2019-02-08
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Publication No.: US10833091B2Publication Date: 2020-11-10
- Inventor: Yu-De Lin , Heng-Yuan Lee , Po-Chun Yeh , Chih-Yao Wang , Hsin-Yun Yang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7fa57995
- Main IPC: H01L27/11507
- IPC: H01L27/11507 ; G11C11/22 ; H01L49/02
Abstract:
A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer.
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