- 专利标题: Integrated circuit and method of manufacturing the same
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申请号: US16506728申请日: 2019-07-09
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公开(公告)号: US10784869B2公开(公告)日: 2020-09-22
- 发明人: Shih-Wei Peng , Cheng-Chi Chuang , Chih-Ming Lai , Jiann-Tyng Tzeng , Wei-Cheng Lin
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: H03K19/0948
- IPC分类号: H03K19/0948 ; H01L27/02 ; H01L23/522 ; H03K19/20 ; H01L23/528 ; G06F30/392
摘要:
An integrated circuit includes a first gate, a second gate, a first contact and a first insulating layer. The first gate extends in the first direction and is located on a first level. The second gate extends in the first direction, is located on the first level, and is separated from the first gate in a second direction different from the first direction. The first contact extends in the second direction, overlaps the first gate and the second gate, is located on a second level different from the first level, and is coupled to at least the first gate. The first insulating layer extends in the second direction, overlaps the first gate and the second gate, and is between the second gate and the first contact.
公开/授权文献
- US20200021292A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME 公开/授权日:2020-01-16
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