- 专利标题： Gate-all-around transistor based non-volatile memory devices
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申请号： US16686643申请日： 2019-11-18
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公开(公告)号： US10784380B2公开(公告)日： 2020-09-22
- 发明人: Zheng Xu , Zhenxing Bi , Dexin Kong , Qianwen Chen
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L27/11521 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/49 ; H01L29/786 ; H01L21/28
摘要：
A semiconductor device including a gate-all-around based non-volatile memory device includes isolated channels including tunnel dielectric material disposed around gate-all-around field effect transistor (GAA FET) channels, at least one floating gate including a first gate material encapsulating the isolated channels, and at least one control gate including a second gate material encapsulating the isolated channels.
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