- 专利标题： 2D crystal hetero-structures and manufacturing methods thereof
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申请号： US15868282申请日： 2018-01-11
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公开(公告)号： US10784351B2公开(公告)日： 2020-09-22
- 发明人: Shih-Yen Lin , Si-Chen Lee , Samuel C. Pan , Kuan-Chao Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , National Taiwan University
- 申请人地址： TW Hsinchu TW Taipei
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- 当前专利权人地址： TW Hsinchu TW Taipei
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L29/78 ; H01L21/02 ; H01L29/66 ; H01L31/032 ; H01L29/15 ; H01L31/0352 ; H01L29/778 ; H01L29/10 ; H01L29/786 ; H01L29/423 ; H01L31/109 ; H01L21/20 ; H01L21/683
摘要：
A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.
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