A low temperature polysilicon panel has an edge region, the edge region includes a polysilicon film layer and an interval spacer layer located above the polysilicon film layer; a row of dummy pixel units are provided on the interval spacer layer; a first conductive thin film layer is provided above the dummy pixel unit; a passivation layer is insulated between the dummy pixel unit and the first conductive thin film layer. The dummy pixel units includes a thin film transistor and a data line electrically connected thereto for accessing a common signal; a first hole provided on the interval spacer layer, and the polysilicon film layer electrically connected to the data line through the first hole. The low temperature polysilicon panel can lead the charge collected on the polysilicon film layer to avoid the edge wounded of the polysilicon panel and prevent the leakage of the polysilicon panel edge.