- 专利标题： Method of forming stacked trench contacts and structures formed thereby
-
申请号： US16382414申请日： 2019-04-12
-
公开(公告)号： US10784201B2公开(公告)日： 2020-09-22
- 发明人: Bernhard Sell , Oleg Golonzka
- 申请人： INTEL CORPORATION
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Finch & Maloney PLLC
- 主分类号： H01L23/535
- IPC分类号： H01L23/535 ; H01L21/768 ; H01L23/485 ; H01L23/522 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L23/528 ; H01L23/532 ; H01L27/088 ; H01L29/08 ; H01L29/417
摘要：
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.
公开/授权文献
信息查询
IPC分类:
