- 专利标题： Proton radiation as a tool for selective degradation and physics based device model test and calibration
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申请号： US15961072申请日： 2018-04-24
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公开(公告)号： US10784173B2公开(公告)日： 2020-09-22
- 发明人: Eric Heller
- 申请人： Government of the United States as Represented by the Secretary of the Air Force
- 申请人地址： US OH Wright-Patterson AFB
- 专利权人： United States of America as represented by the Secretary of the Air Force
- 当前专利权人： United States of America as represented by the Secretary of the Air Force
- 当前专利权人地址： US OH Wright-Patterson AFB
- 代理机构： AFMCLO/JAZ
- 代理商 Chastity D. S. Whitaker
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/66 ; H01L29/778 ; H01L21/263 ; H01L23/552 ; H01L29/40 ; H01L29/20
摘要：
A method of evaluating localized degradation of a III-V compound semiconductor. The method includes preparing first and second III-V compound semiconductors. The second III-V compound semiconductor that is similar to the first III-V compound semiconductor and further comprises a shield layer that is configured to alter exposed portions of channels of the second III-V compound semiconductor. The first and second III-V compound semiconductors and irradiated and then electrically tested. Results of the electrical testing of the first and second III-V compound semiconductors are compared.
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