- 专利标题： Wafer composite and method for producing a semiconductor component
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申请号： US16264071申请日： 2019-01-31
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公开(公告)号： US10784145B2公开(公告)日： 2020-09-22
- 发明人: Rudolf Berger , Wolfgang Lehnert , Gerhard Metzger-Brueckl , Guenther Ruhl , Roland Rupp
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@38d9f2f4
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/02 ; H01L21/304 ; H01L21/20 ; H01L21/78
摘要：
A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.
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