- 专利标题: Ion beam irradiation apparatus
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申请号: US16655012申请日: 2019-10-16
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公开(公告)号: US10784075B2公开(公告)日: 2020-09-22
- 发明人: Shinya Hisada , Kohei Tanaka , Shigehisa Tamura , Makoto Nakaya
- 申请人: NISSIN ION EQUIPMENT CO., LTD.
- 申请人地址: JP Kyoto-shi
- 专利权人: NISSIN ION EQUIPMENT CO., LTD.
- 当前专利权人: NISSIN ION EQUIPMENT CO., LTD.
- 当前专利权人地址: JP Kyoto-shi
- 代理机构: Procopio, Cory, Hargreaves & Savitch LLP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7cf4ae91
- 主分类号: H01J37/36
- IPC分类号: H01J37/36 ; H01J37/20 ; H01J37/18
摘要:
An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.
公开/授权文献
- US20200051776A1 ION BEAM IRRADIATION APPARATUS 公开/授权日:2020-02-13
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