- 专利标题： LTPS thin film transistor and method for manufacturing the same, array substrate and method for manufacturing the same, and display device
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申请号： US16036099申请日： 2018-07-16
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公开(公告)号： US10741692B2公开(公告)日： 2020-08-11
- 发明人: Shengguang Ban , Zhanfeng Cao , Qi Yao , Dapeng Xue
- 申请人： BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Beijing
- 专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址： CN Beijing
- 代理机构： Brooks Kushman P.C.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@61ea038
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/786 ; H01L27/12 ; H01L29/66 ; H01L21/027 ; H01L21/3205 ; G02F1/1362 ; G02F1/1368
摘要：
The present disclosure provides a method for manufacturing an LTPS thin film transistor which includes: forming a light shielding pattern and an active layer of the LTPS thin film transistor on a base substrate through one single patterning process, in which an orthogonal projection of the active layer on the base substrate falls within an orthogonal projection of the light shielding pattern on the base substrate, and the light shielding pattern is made of a semiconductor material.
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