Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16053737Application Date: 2018-08-02
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Publication No.: US10692777B2Publication Date: 2020-06-23
- Inventor: Li-Wei Feng , Shih-Hung Tsai , Chao-Hung Lin , Hon-Huei Liu , Shih-Fang Hong , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3e77e0be
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/225 ; H01L21/324 ; H01L27/092 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.
Public/Granted literature
- US20180342426A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-11-29
Information query
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