- 专利标题： Self-aligning source, drain and gate process for III-V nitride MISHEMTs
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申请号： US15551821申请日： 2016-03-09
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公开(公告)号： US10679860B2公开(公告)日： 2020-06-09
- 发明人: Lakshmi Kanta Bera , Yee Chong Loke , Surani Bin Dolmanan , Sudhiranjan Tripathy , Wai Hoe Tham
- 申请人： Agency for Science, Technology and Research
- 申请人地址： SG Singapore
- 专利权人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- 当前专利权人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- 当前专利权人地址： SG Singapore
- 代理机构： Choate, Hall & Stewart LLP
- 代理商 Brian E. Reese; Dana M. Daukss
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@25b01357
- 国际申请： PCT/SG2016/050111 WO 20160309
- 国际公布： WO2016/144263 WO 20160915
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/285 ; H01L29/51 ; H01L29/20 ; H01L29/778 ; H01L21/28 ; H01L29/205 ; H01L29/40 ; H01L29/45 ; H01L29/49
摘要：
A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.
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