- 专利标题： Memory devices including memory cells and related methods
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申请号： US16111357申请日： 2018-08-24
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公开(公告)号： US10608012B2公开(公告)日： 2020-03-31
- 发明人: Guangyu Huang , Haitao Liu , Chandra V. Mouli , Srinivas Pulugurtha
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L21/02 ; H01L29/16 ; H01L29/20 ; H01L29/24 ; H01L29/04 ; H01L29/165 ; H01L29/66 ; H01L29/22 ; H01L21/28
摘要：
Memory devices and electronic systems include an array of vertical memory cells positioned along respective vertical channels to define vertical memory strings. Each of the vertical channels includes a channel material exhibiting an electron mobility of at least about 30 cm2/(V·s) and a room temperature band gap of at least about 1.40 eV (e.g., zinc oxide, silicon carbide, indium phosphide, indium gallium zinc oxide, gallium arsenide, or molybdenum disulfide) and a bottom plug material exhibiting a room temperature band gap of less than about 1.10 eV (e.g., silicon germanium, germanium, or indium gallium arsenide). Methods of fabricating a memory device include forming such a bottom plug material within vertical channels and forming such a channel material electrically coupled to the bottom plug material.
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