- 专利标题： Self-repairing field effect transisitor
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申请号： US12030719申请日： 2008-02-13
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公开(公告)号： US10600902B2公开(公告)日： 2020-03-24
- 发明人: Robert Xu
- 申请人： Robert Xu
- 申请人地址： US CA San Jose
- 专利权人： Vishay Siliconix, LLC
- 当前专利权人： Vishay Siliconix, LLC
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L29/78 ; H01L23/525 ; H01L27/088 ; H01L29/417 ; H01L29/66 ; H01L29/808
摘要：
A self repairing field effect transistor (FET) device, in accordance with one embodiment, includes a plurality of FET cells each having a fuse link. The fuse links are adapted to blow during a high current event in a corresponding cell.
公开/授权文献
- US20090200578A1 SELF-REPAIRING FIELD EFFECT TRANSISITOR 公开/授权日：2009-08-13
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