发明授权
- 专利标题： Mono- and multilayer silicene prepared by plasma-enhanced chemical vapor deposition
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申请号： US16033397申请日： 2018-07-12
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公开(公告)号： US10600644B2公开(公告)日： 2020-03-24
- 发明人: Xiao Liu , Battogtokh Jugdersuren
- 申请人： The Government of the United States of America, as represented by the Secretary of the Navy
- 申请人地址： US DC Washington
- 专利权人： The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 代理机构： US Naval Research Laboratory
- 代理商 Joslyn Barritt
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/02 ; C30B29/06 ; C30B25/18 ; C30B25/10 ; C30B29/60 ; H01L29/16
摘要：
Processes for fabricating multi- and monolayer silicene on catalyst metal surfaces by means of plasma-enhanced chemical vapor deposition (PECVD). Silicene is grown by means of PECVD from a starting mixture of H2 and SiH4 having an H2:SiH4 ratio of 100 to 400 on an Ag(111) substrate having a substrate temperature between 20° C. and 290° C., with the deposition being performed for about 10-25 minutes at an RF power between 10 W and 500 W and under a chamber pressure between about 100 mTorr and 1300 mTorr. In most cases, the substrate will be in the form of an Ag(111) film sputtered on a fused silica substrate. A multi-layer silicene film can be formed by extending the deposition time past 25 minutes.
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