Invention Grant
- Patent Title: Nanosheet with single epitaxial stack forming off-set dual material channels for gate-all-around CMOS
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Application No.: US15980250Application Date: 2018-05-15
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Publication No.: US10593673B2Publication Date: 2020-03-17
- Inventor: Xin Miao , Jingyun Zhang , Alexander Reznicek , Choonghyun Lee
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/06 ; H01L29/12 ; H01L29/66 ; H01L29/772 ; H01L29/78 ; H01L27/06 ; H01L21/8238 ; H01L27/092 ; H01L29/423 ; H01L29/161 ; H01L29/786 ; H01L21/8232
Abstract:
A semiconductor structure is provided in which an nFET nanosheet stack of suspended silicon channel material nanosheets is present in an nFET device region and a pFET nanosheet stack of suspended silicon germanium alloy channel material nanosheets is present in a pFET device region. The silicon channel material nanosheets of the nFET nanosheet stack are off-set by one nanosheet from the silicon germanium alloy channel material nanosheets of the pFET nanosheet stack.
Public/Granted literature
- US20190355723A1 NANOSHEET WITH SINGLE EPITAXIAL STACK FORMING OFF-SET DUAL MATERIAL CHANNELS FOR GATE-ALL-AROUND CMOS Public/Granted day:2019-11-21
Information query
IPC分类:
