- 专利标题： Nanosheet with single epitaxial stack forming off-set dual material channels for gate-all-around CMOS
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申请号： US15980250申请日： 2018-05-15
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公开(公告)号： US10593673B2公开(公告)日： 2020-03-17
- 发明人: Xin Miao , Jingyun Zhang , Alexander Reznicek , Choonghyun Lee
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 L. Jeffrey Kelly, Esq.
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L29/06 ; H01L29/12 ; H01L29/66 ; H01L29/772 ; H01L29/78 ; H01L27/06 ; H01L21/8238 ; H01L27/092 ; H01L29/423 ; H01L29/161 ; H01L29/786 ; H01L21/8232
摘要：
A semiconductor structure is provided in which an nFET nanosheet stack of suspended silicon channel material nanosheets is present in an nFET device region and a pFET nanosheet stack of suspended silicon germanium alloy channel material nanosheets is present in a pFET device region. The silicon channel material nanosheets of the nFET nanosheet stack are off-set by one nanosheet from the silicon germanium alloy channel material nanosheets of the pFET nanosheet stack.
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