- 专利标题: Apparatuses for reducing off state leakage currents
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申请号: US16201657申请日: 2018-11-27
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公开(公告)号: US10560085B2公开(公告)日: 2020-02-11
- 发明人: Pierguido Garofalo
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: H03K17/687
- IPC分类号: H03K17/687 ; H03K17/06 ; G11C7/06 ; G11C7/10 ; G11C7/22 ; G11C7/08 ; G11C11/4091 ; H03K19/00
摘要:
Apparatuses for reducing leakage currents during an off state for transistors is described herein. An example apparatus includes a switch having an input node and an output node. The switch is configured to couple a signal on the input to the output node when the switch is in an on state and is further configured to decouple the input and output nodes when the switch is in an off state. The switch includes first and second transistors, and further includes third and fourth transistors. A drain electrode of the first transistor is coupled to a source electrode of the third transistor, a drain electrode of the second transistor is coupled to a source electrode of the fourth transistor, and the drain electrodes of the third and fourth transistors are coupled together to the output node.
公开/授权文献
- US20190149143A1 APPARATUSES FOR REDUCING OFF STATE LEAKAGE CURRENTS 公开/授权日:2019-05-16
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