Invention Grant
- Patent Title: Array substrate and method for manufacturing the same
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Application No.: US15580240Application Date: 2017-06-23
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Publication No.: US10559601B2Publication Date: 2020-02-11
- Inventor: Tongshang Su , Jun Cheng , Ce Zhao , Bin Zhou , Dongfang Wang , Guangcai Yuan
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Hefei, Anhui
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Hefei, Anhui
- Agency: Kinney & Lange, P.A.
- Priority: CN201610849162 20160926
- International Application: PCT/CN2017/089717 WO 20170623
- International Announcement: WO2018/054111 WO 20180329
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/15 ; H01L31/036 ; H01L27/12 ; G02F1/133 ; G09G3/3283 ; G09G3/3291 ; H01L29/417 ; H01L51/05 ; H01L27/28 ; H01L51/10 ; H01L27/32

Abstract:
The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.
Public/Granted literature
- US20190221588A1 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-07-18
Information query
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