- 专利标题： Vertical transistor contact for a memory cell with increased density
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申请号： US16023434申请日： 2018-06-29
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公开(公告)号： US10559572B2公开(公告)日： 2020-02-11
- 发明人: Brent A. Anderson , Terence B. Hook , Junli Wang
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L21/768 ; H01L23/522
摘要：
According to an embodiment of the present invention, a method for forming a contact for a transistor includes forming a first doped region over a semiconductor substrate. A second doped region is formed in portions of the first doped region in which portions the first doped region extends below the second doped region. A gate is formed alongside portions of a first fin. Portions of the second doped region and portions of the first doped region extending below the second doped region are removed. Portions of the gate are removed. A metal is deposited in the removed portion of the gate, the removed portion of second doped region, and the first doped region extending below the second doped region to create the contact.
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