Disclosures of the present invention mainly describe an embedded passive device structure, constituted by a first electrically conductive layer, a resistor layer, a dielectric layer, a support layer, a joint layer, and a second electrically conductive layer. Particularly, it is able to form an electronic circuit topology comprising at least one thin film resistor, at least one thin film capacitor and at least one thin film inductor on the embedded passive device structure by applying two times of photolithography processes to the embedded passive device structure. In addition, the resistor layer, formed on the first electrically conductive layer through sputter-coating process, is made of Ni, Cr, W, or compound thereof so as to show the lowest resistance less than or equal to 5 Ω/sq because of having good film continuity and surface densification. Moreover, the use of sputter-coating technology is helpful in reduction of industrial waste water.