- 专利标题： Semiconductor memory device and method of manufacturing the same
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申请号： US15262340申请日： 2016-09-12
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公开(公告)号： US10546871B2公开(公告)日： 2020-01-28
- 发明人: Kenji Aoyama
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Minato-ku
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11556 ; H01L23/528
摘要：
A semiconductor memory device according to an embodiment comprises: a memory cell array region including a plurality of conductive layers that are electrically connected to a plurality of memory cells arranged in a first direction on a semiconductor substrate, the first direction intersecting a surface of the semiconductor substrate; a stepped part for contacting the plurality of conductive layers to a wiring line; a contact extending in the first direction and being connected to the conductive layer in the stepped part; and a plurality of columnar bodies extending in the first direction and penetrates the conductive layer in the stepped part and including a first columnar body having a first height and a second columnar body having a second height which is lower than the first height.
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