发明授权
- 专利标题: Bonded structures
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申请号: US15979312申请日: 2018-05-14
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公开(公告)号: US10546832B2公开(公告)日: 2020-01-28
- 发明人: Liang Wang , Rajesh Katkar , Javier A. DeLaCruz , Arkalgud R. Sitaram
- 申请人: INVENSAS BONDING TECHNOLOGIES, INC.
- 申请人地址: US CA San Jose
- 专利权人: Invensas Bonding Technologies, Inc.
- 当前专利权人: Invensas Bonding Technologies, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Knobbe, Martens, Olson & Bear, LLP
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L23/498 ; H01L23/532 ; H01L23/528 ; H01L23/10 ; B81C1/00 ; H05K1/11
摘要:
A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.
公开/授权文献
- US20180337157A1 BONDED STRUCTURES 公开/授权日:2018-11-22
信息查询
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