- 专利标题: Semiconductor device and method for manufacturing semiconductor device
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申请号: US15902317申请日: 2018-02-22
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公开(公告)号: US10546803B2公开(公告)日: 2020-01-28
- 发明人: Tomonori Katano
- 申请人: FUJI ELECTRIC CO., LTD.
- 申请人地址: JP Kawasaki
- 专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人地址: JP Kawasaki
- 优先权: JP2017-088819 20170427
- 主分类号: H01L23/492
- IPC分类号: H01L23/492 ; H01L21/52 ; H01L23/00 ; H01L23/053
摘要:
A semiconductor device includes an insulating circuit-substrate on which a semiconductor chip is mounted, a casing accommodating the insulating circuit-substrate, and a plate-shaped terminal-connecting member having both ends suspended so that the terminal-connecting member extends between two opposite side-walls of the casing, the terminal-connecting member having a connection-terminal and load-absorbing portions, the connection-terminal being provided in a central region between the both ends so as to be connected to the semiconductor chip, the load-absorbing portions being provided between fixing points to the casing and the central region, the rigidity of the load-absorbing portions in a longitudinal direction being equal to or less than 50% of the rigidity of the central region so that the load-absorbing portions absorb load applied from the two side-walls and are deformed.
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