- 专利标题: Plasma processing apparatus
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申请号: US15429393申请日: 2017-02-10
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公开(公告)号: US10546725B2公开(公告)日: 2020-01-28
- 发明人: Takahiro Hirano , Toshihiko Iwao
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Rothwell, Figg, Ernst & Manbeck, P.C.
- 优先权: JP2016-028359 20160217
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; C23C16/455 ; C23C16/511 ; H01L21/67 ; H01L21/683
摘要:
Disclosed is a plasma processing apparatus including: a processing container that defines a processing space; a microwave generator that generates microwaves for plasma excitation; a dielectric having a facing surface that faces the processing space; a slot plate provided on a surface of the dielectric opposite to the facing surface and formed with a plurality of slots that radiate the microwaves to the processing space through the dielectric; and a conductor pattern that is provided on the facing surface of the dielectric and converges an electric field corresponding to the microwaves radiated from each of the slots.
公开/授权文献
- US20170236690A1 PLASMA PROCESSING APPARATUS 公开/授权日:2017-08-17
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