- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US16028146申请日： 2018-07-05
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公开(公告)号： US10529846B2公开(公告)日： 2020-01-07
- 发明人: Taro Moriya , Hiroyoshi Kudou , Hiroshi Yanagigawa
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2017-152602 20170807
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L23/00 ; H01L29/423 ; H01L21/763 ; H01L27/06
摘要：
A semiconductor device includes a semiconductor substrate, a gate electrode, and a first contact plug. The semiconductor substrate includes a first surface and a second surface. Over the semiconductor substrate, a source region, a drain region, a drift region, and a body region are formed. A first trench in which the gate electrode is buried is formed in the first surface. The first surface includes an effective region and a peripheral region. The first trench extends from the peripheral region over the effective region along a first direction. The gate electrode includes a portion opposed to and insulated from the body region sandwiched between the source region and the drift region. In the peripheral region, the first contact plug is electrically coupled to the gate electrode buried in the first trench such that its longer side is along the first direction when seen in a plan view.
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