- 专利标题: Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
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申请号: US16136644申请日: 2018-09-20
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公开(公告)号: US10529605B2公开(公告)日: 2020-01-07
- 发明人: Takayuki Nakada , Daigi Kamimura
- 申请人: KOKUSAI ELECTRIC CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: KOKUSAI ELECTRIC CORPORATION
- 当前专利权人: KOKUSAI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Volpe and Koenig, P.C.
- 主分类号: H01L21/673
- IPC分类号: H01L21/673 ; H01L21/67 ; C23C16/458 ; C23C16/455 ; C23C16/46 ; H01L21/677
摘要:
There is provided a technique includes: a substrate holder including a heat insulating part and a substrate holding part disposed above the heat insulating part and holding substrates in multiple stages; a process chamber processing the substrates held by the substrate holding part; a transfer chamber adjacent to the process chamber and transferring the substrates to the substrate holding part; a transfer mechanism transferring the substrate holder; a first gas supply part installed on one side of the transfer chamber and supplying gas into the transfer chamber; a second gas supply part having gas outlets at a height position between the substrate held at a lowermost stage of the substrate holding part and the heat insulating part and supplying a gas toward the substrate holder; and a controller controlling the transfer mechanism, the first gas supply part and the second gas supply part.
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