- 专利标题： Structure and method of forming fin device having improved fin liner
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申请号： US15938255申请日： 2018-03-28
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公开(公告)号： US10510610B2公开(公告)日： 2019-12-17
- 发明人: Min Gyu Sung , Naushad K. Variam , Sony Varghese , Johannes Van Meer , Jae Young Lee
- 申请人： Varian Semiconductor Equipment Associates, Inc.
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/265 ; H01L21/02 ; H01L21/266 ; H01L27/088 ; H01L29/06 ; H01L21/762
摘要：
A method for forming a semiconductor device. The method may include providing a transistor structure, where the transistor structure includes a fin array, the fin array including a plurality of semiconductor fins, disposed on a substrate. A liner may be disposed on the plurality of semiconductor fins. The method may include directing first angled ions to the fin array, wherein the liner is removed in an upper portion of the plurality of semiconductor fins, and wherein the liner remains in a lower portion of the at least one of the plurality of semiconductor fins, and wherein the upper portion comprises an active fin region to form a transistor device.
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