- 专利标题： Dry ashing by secondary excitation
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申请号： US15993178申请日： 2018-05-30
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公开(公告)号： US10510553B1公开(公告)日： 2019-12-17
- 发明人: Jack Kuo-Ping Kuo , Sheng-Liang Pan , Chia-Yang Hung , Jyu-Horng Shieh , Shu-Huei Suen , Syun-Ming Jang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/67 ; H01J37/32
摘要：
An ashing process and device forms radicals of an ashing gas through a secondary reaction. A plasma is generated from a first gas, which is diffused through a first gas distribution plate (GDP). The plasma is diffused through a second GDP and a second gas is supplied below the second GDP. The first gas reacts with the second gas to energize the second gas. The energized second gas is used in ashing a resist layer from a substrate.
公开/授权文献
- US20190371619A1 Dry Ashing by Secondary Excitation 公开/授权日：2019-12-05
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