- 专利标题： Method for producing a self-aligning masking layer
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申请号： US15485232申请日： 2017-04-12
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公开(公告)号： US10468248B2公开(公告)日： 2019-11-05
- 发明人: Heiko Aßmann , Felix Braun , Marcus Dankelmann , Stefan Doering , Karsten Friedrich , Udo Goetschkes , Andreas Greiner , Ralf Rudolf , Jens Schneider
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Viering, Jentschura & Partner MBB
- 优先权： DE102016106691 20160412
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/265 ; H01L21/027 ; H01L21/266 ; H01L21/268 ; H01L21/324 ; H01L29/06
摘要：
In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.
公开/授权文献
- US20170294299A1 METHOD FOR PRODUCING A SELF-ALIGNING MASKING LAYER 公开/授权日：2017-10-12
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