- 专利标题： Etchant composition and method of manufacturing a thin film transistor substrate by using the same
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申请号： US15005614申请日： 2016-01-25
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公开(公告)号： US10465296B2公开(公告)日： 2019-11-05
- 发明人: Soomin An , Youngjun Kim , Hongsick Park , Inseol Kuk , Youngchul Park , Inho Yu , Seungsoo Lee , Jongmun Lee , Daesung Lim
- 申请人： Samsung Display Co., Ltd. , Dongwoo Fine-Chem Co., Ltd.
- 申请人地址： KR Yongin-si KR Iksan-si
- 专利权人： Samsung Display Co., Ltd.,Dongwoo Fine-Chem Co., Ltd.
- 当前专利权人： Samsung Display Co., Ltd.,Dongwoo Fine-Chem Co., Ltd.
- 当前专利权人地址： KR Yongin-si KR Iksan-si
- 代理机构： H.C. Park & Associates, PLC
- 优先权： KR10-2015-0108146 20150730
- 主分类号： C23F1/18
- IPC分类号： C23F1/18 ; C23F1/26 ; H01L27/12 ; H01L21/3213 ; H01L29/49
摘要：
An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
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