Invention Grant
- Patent Title: Combing bump structure and manufacturing method thereof
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Application No.: US16048357Application Date: 2018-07-30
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Publication No.: US10446514B2Publication Date: 2019-10-15
- Inventor: Po-Chun Lin , Chin-Lung Chu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
A manufacturing method of a combing bump structure is disclosed. In the manufacturing method, a semiconductor substrate is provided, a pad is formed on the semiconductor substrate, a conductive layer is formed on the pad, a solder bump is formed on the conductive layer, and at least two metal side walls are formed disposed along opposing laterals of the solder bump respectively.
Public/Granted literature
- US20180337154A1 COMBING BUMP STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-11-22
Information query
IPC分类:
