- 专利标题: Mesa shaped micro light emitting diode with electroless plated N-contact
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申请号: US15853505申请日: 2017-12-22
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公开(公告)号: US10418510B1公开(公告)日: 2019-09-17
- 发明人: Celine Claire Oyer , Allan Pourchet
- 申请人: Facebook Technologies, LLC
- 申请人地址: US CA Menlo Park
- 专利权人: Facebook Technologies, LLC
- 当前专利权人: Facebook Technologies, LLC
- 当前专利权人地址: US CA Menlo Park
- 代理机构: Fenwick & West LLP
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/38 ; H01L33/06
摘要:
A method for fabricating a light emitting diode (LED) with a first electrical contact deposited around the side of a layered mesa structure. First, layers of materials are formed. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first and second semiconductor layers for producing light responsive to passing current through the light emitting layer. The formed layers of material are shaped to include a bottom surface, a top surface, and at least one side surface extending from the bottom surface to the top surface. The top surface has a smaller area than the bottom surface. An electrical contact is deposited on the at least one side surface.
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