- 专利标题： Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method
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申请号： US15870227申请日： 2018-01-12
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公开(公告)号： US10418250B2公开(公告)日： 2019-09-17
- 发明人: Gon-jun Kim , Yuri Barsukov , Vladimir Volynets , Dali Liu , Sang-jin An , Beom-jin Yoo , Sang-heon Lee , Shamik Patel
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2017-0079217 20170622
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01J37/32 ; H01L21/02
摘要：
An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.
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