公开(公告)号：US10418250B2

公开(公告)日：2019-09-17

申请号：US15870227

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gon-jun Kim ,  Yuri Barsukov ,  Vladimir Volynets ,  Dali Liu ,  Sang-jin An ,  Beom-jin Yoo ,  Sang-heon Lee ,  Shamik Patel

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.