- 专利标题: Substrate processing method
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申请号: US15793754申请日: 2017-10-25
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公开(公告)号: US10414685B2公开(公告)日: 2019-09-17
- 发明人: Kenichi Ichikawa , Kaori Tateishi , Yasushi Ito
- 申请人: Via Mechanics, Ltd.
- 申请人地址: JP Kanagawa
- 专利权人: VIA MECHANICS, LTD.
- 当前专利权人: VIA MECHANICS, LTD.
- 当前专利权人地址: JP Kanagawa
- 代理机构: Nixon Peabody LLP
- 代理商 Thomas P. Pavelko
- 优先权: JP2016-221994 20161115; JP2017-171782 20170907
- 主分类号: G01B11/26
- IPC分类号: G01B11/26 ; C03B33/10 ; B25H7/04 ; B23K26/00 ; B23K26/035 ; B23K26/352 ; B23K26/402 ; B23K26/382 ; C03C17/32 ; C03C19/00 ; B23K103/00 ; C03B33/037 ; C03B33/07 ; B23K103/16
摘要:
In a substrate processing method in which, for a substrate including a first layer made of a glass substrate and second layers made of a material different from that of the first layer and provided on a front surface and a back surface of the first layer, respectively, an intended mark is formed in each of the second layers, the substrate processing method includes the step of irradiating with a laser beam having an energy density capable of processing the second layers but incapable of processing the first layer from one surface side of the substrate, thereby simultaneously forming the mark at corresponding positions on each of a front surface and a back surface of the substrate.
公开/授权文献
- US20180134607A1 SUBSTRATE PROCESSING METHOD 公开/授权日:2018-05-17
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